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PD-91646C
PRELIMINARY
IRF7521D1
FETKY ? MOSFET / Schottky Diode
q
q
q
q
q
Co-packaged HEXFET ? Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low V F Schottky Rectifier
Generation 5 Technology
Micro8 TM Footprint
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
V DSS = 20V
R DS(on) = 0.135 ?
Schottky Vf = 0.39V
Description
T op V ie w
The FETKY TM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
TM
package, with half the footprint area of the standard SO-8,
Micro8
TM
provides the smallest footprint available in an SOIC outline. This makes the Micro8 TM
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8
TM
will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T A = 25°C unless otherwise noted)
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
2.4
1.9
19
1.3
0.8
10
± 12
5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
100
°C/W
Notes:
? Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
? I SD ≤ 1.7A, di/dt ≤ 66A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%
? Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
01/29/99
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